TETRA Teknolojik Sistemler A.Ş.
CAMECA

SIMS 4550

Quadrupole SIMS Microprobe for dopant depth profiling and thin layer analysis in semiconductors.

The CAMECA SIMS 4550 offers extended capabilities for ultra shallow depth profiling, trace element and composition measurements of thin layers in Si, high-k, SiGe and other compound materials such as III-V for optical devices.

High depth resolution and high throughput

With ever shrinking device dimensions, the implant profiles and layer thickness of today’s semiconductors are often in the range of 1-10nm. The SIMS 4550 has been optimized to address these application fields by offering oxygen and cesium high density primary beam with an impact energy programmable from 5keV down to less than 150eV.

Flexibility

CAMECA’s SIMS 4550 is a dynamic SIMS tool offering full flexibility in sputter conditions (impact angle, energy, species).

AGENCIES

CONTACT US

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ANKARA0312 472 63 63

6. Cadde (1322 Cadde) No:40 06450 Öveçler ANKARA

ankara@tetratek.com.tr
İSTANBUL0212 212 55 66

Mecidiye Mah. Bestekar Şevki Bey Sokak No:32 34335 Balmumcu - Beşiktaş / İSTANBUL

istanbul@tetratek.com.tr
İZMİR0232 239 79 49

Mansuroğlu Mah. 288/3 Sok. No:1 Selvili 2 Apt. A Blok K:1 D:2 BAYRAKLI -İZMİR

izmir@tetratek.com.tr
ADANA0322 459 97 82

Reşatbey Mah. Adalet Cad. 54/6 01200 ADANA

adana@tetratek.com.tr
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