High Performance Magnetic Sector SIMS for Advanced Semiconductors
The CAMECA SC Ultra has been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors.
From standard to ultra-shallow depth profiling
A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a SIMS instrument capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...).
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